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STM6914
S a mHop Microelectronics C orp.
Ver 1.0
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
30V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package.
ID
6.5A
RDS(ON) (m) Max
32 @ VGS=10V 52 @ VGS=4.5V
D2 D2
5 6 7 8
4 3 2 1
G2 S2 G1 S1
S O-8 1
D1 D1
ABSOLUTE MAXIMUM RATINGS ( T A=25 C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a
Limit 30 20 TA=25C TA=70C TA=25C TA=70C 6.5 5.2 24
a
Units V V A A A W W C
Maximum Power Dissipation
2 1.28 -55 to 150
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
a
62.5
C/W
Details are subject to change without notice.
Oct,23,2008
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STM6914
Ver 1.0
ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted )
Symbol Parameter Conditions
VGS=0V , ID=250uA VDS=24V , VGS=0V
Min 30
Typ
Max
Units V
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current
VGS= 20V , VDS=0V
1 100
uA nA
ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VDS=VGS , ID=250uA VGS=10V , ID=6.5A VGS=4.5V , ID=5.1A VDS=5V , ID=6.5A
1
1.9 26 40 7
3 32 52
V m ohm m ohm S pF pF pF ns ns ns ns nC nC nC nC
DYNAMIC CHARACTERISTICS CISS COSS CRSS
Input Capacitance Output Capacitance Reverse Transfer Capacitance
c
VDS=15V,VGS=0V f=1.0MHz
513 91 73 10 11 17.5 10.5 9.2 4.7 1.3 2.7 2 0.82 1.2
SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD=15V ID=1A VGS=10V RGEN=6 ohm VDS=15V,ID=6.5A,VGS=10V VDS=15V,ID=6.5A,VGS=4.5V VDS=15V,ID=6.5A, VGS=4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD VGS=0V,IS=2A Diode Forward Voltage b
A V
Notes
_ a.Surface Mounted on FR4 Board,t < 10sec. _ _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing.
Oct,23,2008
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STM6914
Ver 1.0
25 VGS=10V VGS=4.5V 15
ID, Drain Current(A)
VGS=4V 15
ID, Drain Current(A)
20
VGS=5V
12 Tj=125 C 9 25 C 6 -55 C
10 VGS=3.5V 5 VGS=3V 0 0 0.5 1.0 1.5 2.0 2.5 3.0
3
0 0.0 0.7 1.4 2.1 2.8 3.5 4.2
VDS, Drain-to-Source Voltage(V)
VGS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
66 55 V G S =4.5V
Figure 2. Transfer Characteristics
1.60 1.48 1.36 1.24 1.12 1.00 0.88
V G S =10V ID=6.5A
RDS(on)(m )
44 33 22 11 1 V G S =10V
RDS(on), On-Resistance Normalized
V G S =4.5V ID=5.1A
1
5
10
15
20
25
0
25
50
75
100
125
150 T j ( C )
ID, Drain Current(A)
Tj, Junction Temperature( C )
Figure 3. On-Resistance vs. Drain Current and Gate Voltage
1.3
Figure 4. On-Resistance Variation with Drain Current and Temperature
1.15
BVDSS, Normalized Drain-Source Breakdown Voltage
Vth, Normalized Gate-Source Threshold Voltage
1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75
VDS=VGS ID=250uA
ID=250uA
1.10 1.05 1.00 0.95 0.90 0.85 -50
100 125 150
-25
0
25
50
75
100 125 150
Tj, Junction Temperature( C )
Tj, Junction Temperature( C )
Figure 5. Gate Threshold Variation with Temperature 3
Figure 6. Breakdown Voltage Variation with Temperature
Oct,23,2008
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STM6914
Ver 1.0
90 75 20.0
Is, Source-drain current(A)
ID=6.5A
10.0
RDS(on)(m )
60 45 30 75 C 15 0 25 C
5.0 125 C 25 C
125 C
75 C 1.0
0
2
4
6
8
10
0
0.3
0.6
0.9
1.2
1.5
VGS, Gate-to-Source Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs. Gate-Source Voltage
900
Figure 8. Body Diode Forward Voltage Variation with Source Current
10
VGS, Gate to Source Voltage(V)
750
8
C, Capacitance(pF)
VDS=15V ID=6.5A
600 Ciss 450 300 150 Crss 0 0 5 10 15 20 25 30 Coss
6
4
2
0 0 2 4 6 8 10 12 14 16
VDS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
1000
80
im it
10 0u
Switching Time(ns)
100
Tr TD(off) TD(on) Tf
ID, Drain Current(A)
10
RD
ON S(
)L
1m
s
10
1
10
DC
10 ms 0m s
s
1 1
VDS=15V,ID=1A VGS=10V
6 10 60 100 600
0.1 0.03 0.1
VGS=10V Single Pulse TA=25 C
1 10 30
Rg, Gate Resistance()
VDS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Oct,23,2008
4
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STM6914
Ver 1.0
15V
V ( BR )D S S
tp
VDS
L
D R IVE R
RG
20V
D .U .T
IA S tp
+ - VD D
A
0.0 1
IAS
Unclamped Inductive Test Circuit F igure 13a.
Unclamped Inductive Waveforms F igure 13b.
10
Normalized Transient Thermal Resistance
1
0.5 0.2 0.1 P DM 0.05
0.1
0.02 0.01
t1 t2 1. 2. 3. 4. R J A (t)=r (t) * R J A R J A=S ee Datas heet T J M-T A = P DM* R J A (t) Duty C ycle, D=t1/t2
Single Pulse
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve
Oct,23,2008
5
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STM6914
Ver 1.0
PACKAGE OUTLINE DIMENSIONS SO-8
1 L
E D
0.015X45
A
e
0.05 TYP.
B
0.016 TYP.
A1
0.008 TYP.
C
H
MILLIME T E R S S Y MB OLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0 MAX 1.75 0.25 4.98 3.99 6.20 1.27 8 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0
INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8
Oct,23,2008
6
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STM6914
Ver 1.0
SO-8 Tape and Reel Data
SO-8 Carrier Tape
P1 D1 P2
A
E1 E2
B0
A0
D0
P0
A
TERMINAL NUMBER 1
T
SECTION A-A
K0
FEEDING DIRECTION
unit:
PACKAGE SOP 8N 150 A0
6.50 0.15
B0
5.25 0.10
K0
2.10 0.10
D0
1.5 (MIN)
D1
1.55 0.10
E
12.0 +0.3 - 0.1
E1
1.75 0.10
E2
5.5 0.10
E
P0
8.0 0.10
P1
4.0 0.10
P2
2.0 0.10
T
0.30 0.013
SO-8 Reel
W1
S G N
R H W
UNIT:
V
M
TAPE SIZE
12
REEL SIZE
330
M
330 1
N
62 1.5
W
12.4 + 0.2
W1
16.8 - 0.4
H
12.75 + 0.15
K
S
2.0 0.15
G
R
K V
Oct,23,2008
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